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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 34 i d @ v gs = 12v, t c = 100c continuous drain current 21 i dm pulsed drain current 136 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 34 a e ar repetitive avalanche energy 15 mj dv/dt peak diode recovery dv/dt 5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 2.6 (typical) g pre-irradiation international rectifier?s radhard tm hexfet ? technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened jansr2n7268u power mosfet surface mount (smd-1) www.irf.com 1 100v, n-channel rad hard ? hexfet ? technology product summary part number radiation level r ds(on) i d qpl part number IRHN7150 100k rads (si) 0.065 ? 34a jansr2n7268u irhn3150 300k rads (si) 0.065 ? 34a jansf2n7268u irhn4150 500k rads (si) 0.065 ? 34a jansg2n7268u irhn8150 1000k rads (si) 0.065 ? 34a jansh2n7268u

IRHN7150 smd-1 ref: mil-prf-19500/603 features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight pd - 90720e
2 www.irf.com IRHN7150, jansr2n7268u pre- irradiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs =0 v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.13 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source ? ? 0.065 v gs = 12v, i d = 21a on-state resistance ? ? 0.070 ? v gs = 12v, i d = 34a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.0 ? ? s ( )v ds > 15v, i ds = 21a i dss zero gate voltage drain current ? ? 25 v ds = 80v,v gs =0v ? ? 250 v ds = 80v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 160 v gs = 12v, i d = 34a q gs gate-to-source charge ? ? 35 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 65 t d (on) turn-on delay time ? ? 45 v dd = 50v, i d = 34a, t r rise time ? ? 190 v gs = 12v, r g =2.35 ? t d (off) turn-off delay time ? ? 170 t f fall time ? ? 130 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 4300 ? v gs = 0v, v ds = 25v c oss output capacitance ? 1200 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 200 ? na ? nh ns a note: corresponding spice and saber models are available on the international rectifier website.

source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 34 i sm pulse source current (body diode) ? ? 136 v sd diode forward voltage ? ? 1.4 v t j = 25c, i s = 34a, v gs = 0v t rr reverse recovery time ? ? 570 ns t j = 25c, i f = 34a, di/dt 100a/ s q rr reverse recovery charge ? ? 5.8 c v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from the center of drain pad to center of source pad thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.83 r thj-pcb junction-to-pc board ? 6.6 ? soldered to a 1?sq. copper-clad board c/w
www.irf.com 3 pre-irradiation IRHN7150, jansr2n7268u table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300 k- 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 ? 200 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 25 ? 50 a v ds =80v, v gs =0v r ds(on) static drain-to-source ? 0.065 ? 0.09 ? v gs = 12v, i d =21a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.065 ? 0.09 ? v gs = 12v, i d =21a on-state resistance (smd-1) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHN7150 (jansr2n7268u) 2. part numbers irhn3150 (jansf2n7268u), irhn4150 (jansg2n7268u) and irhn8150 (jansh2n7268u) fig a. single event effect, safe operating area v sd diode forward voltage ? 1.4 ? 1.4 v v gs = 0v, i s = 34a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

table 2. single event effect safe operating area ion let energy range v ds(v) (mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 100 100 100 80 60 br 36.8 305 39 100 90 70 50 ? 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 vgs vds cu br
4 www.irf.com IRHN7150, jansr2n7268u pre- irradiation post-irradiation fig 2. typical response of on-state resistance vs. total dose exposure fig 1. typical response of gate threshhold voltage vs. total dose exposure fig 3. typical response of transconductance vs. total dose exposure fig 4. typical response of drain to source breakdown vs. total dose exposure
www.irf.com 5 pre-irradiation IRHN7150, jansr2n7268u post-irradiation fig 6. typical on-state resistance vs. neutron fluence level fig 5. typical zero gate voltage drain current vs. total dose exposure fig 8b. v dss stress equals 80% of b vdss during radiation fig 9. high dose rate (gamma dot) test circuit fig 7. typical transient response of rad hard hexfet during 1x10 12 rad (si)/sec exposure fig 8a. gate stress of v gss equals 12 volts during radiation
6 www.irf.com IRHN7150, jansr2n7268u pre- irradiation post-irradiation radiation characteristics fig 11. typical output characteristics post-irradiation 100k rads (si) fig 10. typical output characteristics pre-irradiation fig 12. typical output characteristics post-irradiation 300k rads (si) fig 13. typical output characteristics post-irradiation 1 mega rads (si) note: bias conditions during radiation: v gs = 12 vdc, v ds = 0 vdc
www.irf.com 7 pre-irradiation IRHN7150, jansr2n7268u radiation characteristics fig 16. typical output characteristics post-irradiation 300k rads (si) fig 17. typical output characteristics post-irradiation 1 mega rads (si) fig 14. typical output characteristics pre-irradiation fig 15. typical output characteristics post-irradiation 100k rads (si) note: bias conditions during radiation: v gs = 0 vdc, v ds = 160 vdc
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www.irf.com 11 pre-irradiation IRHN7150, jansr2n7268u q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +,
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12 www.irf.com IRHN7150, jansr2n7268u pre- irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l=0.86mh peak i l = 34a, v gs =12v i sd 34a, di/dt 140a/ s, v dd 100v, t j 150c foot notes: case outline and dimensions ? smd-1 p ad assignments ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2006

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